november 2012 FCP36N60N / fcpf36n60nt n-channel mosfet ?2012 fairchild semiconductor corporation FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 1 supremos tm mosfet maximum ratings t c = 25 o c unless otherwise noted *drain current limited by maximum junction temperature thermal characteristics symbol parameter FCP36N60N fcpf36n60nt units v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 36 36* a -continuous (t c = 100 o c) 22.7 22.7* i dm drain current - pulsed (note 1) 108 108* a e as single pulsed avalanche energy (note 2) 1800 mj i ar avalanche current 12 a e ar repetitive avalanche energy 3.12 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns mosfet dv/dt ruggedness 100 p d power dissipation (t c = 25 o c) 312 w - derate above 25 o c2.6w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FCP36N60N fcpf36n60nt units r jc thermal resistance, junction to case 0.4 3.5 o c/w r cs thermal resistance, case to heat sink (typical) 0.5 0.5 r ja thermal resistance, junction to ambient 62.5 62.5 FCP36N60N / fcpf36n60nt n-channel mosfet 600v, 36a, 90m features ?r ds(on) = 81m ( typ.)@ v gs = 10v, i d = 18a ? ultra low gate charge ( typ. qg = 86nc) ? low effective output capacitance ? 100% avalanche tested ? rohs compliant description the supremos mosfet, fairchild?s next generation of high voltage super-junction mosfets, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. by utilizing this advanced technology and precise process control, supremos provi des world class rsp, superior switching performance and ruggedness. this supremos mosfet fits the industry?s ac-dc smps requirements for pfc, server/telecom power, fpd tv power, atx power, and industrial power applications. g s d to-220f g s d to-220 g d s
FCP36N60N / fcpf36n60nt n-channel mosfet FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FCP36N60N FCP36N60N to-220 - - 50 fcpf36n60nt fcpf36n60nt to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v, t c = 25 o c 600 - - v i d = 1ma, referenced to 25 o c-0.7-v/ o c v ds = 480v, v gs = 0v - - 10 a bv dss t j breakdown voltage temperature coefficient v ds = 480v, v gs = 0v, t c = 125 o c - - 100 i dss zero gate voltage drain current v gs = 30v, v ds = 0v - - 100 na i d = 1ma, v gs = 0v, t c = 25 o c 600 - - v i gss gate to body leakage current i d = 1ma, referenced to 25 o c-0.7-v/ o c v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.0-4.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 18a - 81 90 m g fs forward transconductance v ds = 20v, i d = 18a - 41 - s c iss input capacitance v ds = 100v, v gs = 0v f = 1mhz - 3595 4785 pf c oss output capacitance - 149 200 pf c rss reverse transfer capacitance - 4 6 pf c oss output capacitance v ds = 380v, v gs = 0v, f = 1mhz - 80 - pf c oss eff. effective output capacitance v ds = 0v to 380v, v gs = 0v - 361 - pf q g(tot) total gate charge at 10v v ds = 380v, i d = 18a, v gs = 10v (note 4) - 86 112 nc q gs gate to source gate charge - 15.4 - nc q gd gate to drain ?miller? charge - 26.4 - nc esr equivalent series resistance drain open - 1 - t d(on) turn-on delay time v dd = 380v, i d = 18a v gs = 10v, r g = 4.7 (note 4) -2356ns t r turn-on rise time - 22 54 ns t d(off) turn-off delay time - 94 198 ns t f turn-off fall time - 4 18 ns i s maximum continuous drain to source diode forward current - - 18 a i sm maximum pulsed drain to source diode forward current - - 108 a v sd drain to source diode forward voltage v gs = 0v, i sd = 18a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 18a di f /dt = 100a/ s - 574 - ns q rr reverse recovery charge - 10 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 12a, r g = 25 , starting t j = 25c 3. i sd 36a, di/dt 200a/ s, v dd = 380v, starting t j = 25c 4. essentially independent of operating temperature typical characteristics
FCP36N60N / fcpf36n60nt n-channel mosfet FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 100 0.1 1 10 100 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v i d , drain current[a] v ds , drain-source voltage[v] 234567 0.3 1 10 100 1000 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 20406080100 0 0.1 0.2 0.3 *notes: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.4 0.6 0.8 1.0 1.2 1 10 100 300 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0255075100 0 2 4 6 8 10 *notes: i d = 18a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 600 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *notes: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FCP36N60N / fcpf36n60nt n-channel mosfet FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area vs. case temperature - FCP36N60N vs. case temperature - fcpf36n60nt figure 11. maximum drain current -80 -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 18a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 20 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0.1 1 10 100 1000 0.01 0.1 1 10 100 200 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 10 20 30 40 i d , drain current [a] t c , case temperature [ o c ]
FCP36N60N / fcpf36n60nt n-channel mosfet FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12. transient thermal response curve - FCP36N60N figure 13. transient thermal response curve - fcpf36n60nt 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 10 3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 0.1 1 4 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.0 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FCP36N60N / fcpf36n60nt n-channel mosfet FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCP36N60N / fcpf36n60nt n-channel mosfet FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FCP36N60N / fcpf36n60nt n-channel mosfet FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 8 mechanical dimensions to-220ab
FCP36N60N / fcpf36n60nt n-channel mosfet FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 9 package dimensions dimensions in millimeters to-220f potted * front/back side isolation voltage : ac 2500v
FCP36N60N / fcpf36n 60nt n-channel mosfet FCP36N60N / fcpf36n60nt rev. c0 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume any li ability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwid e terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support d evices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life su pport, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life sup port device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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